STTH200L04TV1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STTH200L04TV1' PDF : 8 Pages View PDF
Characteristics
STTH200L04TV1
Figure 5. Reverse recovery time versus
dIF/dt (typical values, per diode)
trr (ns)
300
250
IF=IF(AV)
VR=200V
Tj=125°C
200
150
100
50
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery charges versus
dIF/dt (typical values, per diode)
Qrr (nC)
3500
3000
IF=IF(AV)
VR=200V
Tj=125°C
2500
2000
1500
1000
500
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 7.
Reverse recovery softness factor
versus dIF/dt
(typical values, per diode)
SFACTOR
0.8
0.7
0.6
IF < 2 x IF(AV)
VR=200V
Tj=125°C
0.5
0.4
0.3
0.2
0.1
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
tRR
IRM
QRR
50
SFACTOR
Tj (°C)
75
IF=IF(AV)
VR=200V
Reference: Tj=125°C
100
125
4/8
Doc ID 12827 Rev 2
Share Link: 
