T1235H-600T View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'T1235H-600T' PDF : 7 Pages View PDF
T1235H Series
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
0.0
-40 -20 0
Tj(°C)
20 40 60 80 100 120 140 160
ITSM(A)
150
125
100
75
50
Repetitive
Tc=135°C
25
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10
100
t=20ms
One cycle
1000
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM(A),I²t(A²s)
2000
1000
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
Fig. 7: On-state characteristics (maximum
values).
ITM(A)
200
Tj max.
100
Vto = 0.80 V
Rd = 25 mΩ
Tj max.
10
Tj=25°C
100
0.01
tp(ms)
0.10
1.00
I²t
10.00
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 8: Relative variation of critical rate of
decrease of main current versus junction
temperature (typical values).
Fig. 9: Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
(dI/dt)c [Tj] / (dI/dt)c [Tj=150°C]
8
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6.0
7
5.0
6
5
4.0
4
3.0
3
2.0
2
1.0
1
Tj(°C)
0
25
50
0.0
75
100
125
150
0.1
(dV/dt)c (V/µs)
1.0
10.0
100.0
4/7
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