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T1235H-600T View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
T1235H-600T
ST-Microelectronics
STMicroelectronics ST-Microelectronics
'T1235H-600T' PDF : 7 Pages View PDF
1 2 3 4 5 6 7
T1235H Series
Fig. 10: Leakage current versus junction
temperature for different values of blocking
voltage (typical values).
Fig. 11: Acceptable repetitive peak off-state
voltage versus case-ambient thermal resistance.
IDRM/IRRM(mA)
1E+1
1E+0
1E-1
VD=VR=200V
VD=VR=400V
VD=VR=600V
1E-2
1E-3
50
Tj(°C)
75
100
125
VDRM/VRRM(V)
700
600
Tj=150°C
Rth(j-c)=1.2°C/W
500
400
300
200
100
Rth(c-a)(°C/W)
0
150
0 2 4 6 8 10 12 14 16 18 20
Fig. 12: D²PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm).
Rth(j-a) (°C/W)
80
70
D²PAK
60
50
40
30
20
10
S(cm²)
0
0 4 8 12 16 20 24 28 32 36 40
5/7
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