T15V2M16B-70C View Datasheet(PDF) - Taiwan Memory Technology

Part Name

Description

MFG CO.

T15V2M16B-70C

128K X 16 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

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tm TE

CH

DATA RETENTION CHARACTERISTICS

T15V2M16B

PARAMETER

VCC for Data Retention

Data Retention Current

Chip Deselect to Data Retention

Time

Operation Recovery Time

SYM.

VDR

ICCDR

tCDR

TEST CONDITION

CE ≥VCC -0.2V

VIN ≥ Vcc -0.2V or

VIN ≤ 0.2V

tR

*note : the data retention current ‘max=40uA’ only for –45ns .

MIN.

2.0

-

0

tRC

DATA RETENTION WAVEFORM

(Ta = -10 ~ +70 °C / -40°C ~ 85°C)

Data Retention Mode

MAX.

-

15/40*

-

-

UNIT

V

uA

ns

ns

Vcc

Vcc_typ

tCDR

VDR > 2.0V

Vcc_typ

tR

CE

VIH

CE >Vcc- 0.2V

VIH

TM Technology Inc. reserves the right

P. 10

to change products or specifications without notice.

Publication Date: NOV. 2002

Revision:A

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