T15V2M16B-70C View Datasheet(PDF) - Taiwan Memory Technology
Part Name
Description
MFG CO.
'T15V2M16B-70C' PDF : 12 Pages View PDF
tm TE
CH
WRITE CYCLE 3 ( UB , LB Controlled)
Ad d res s
UB / LB
CE
WE
tWC
tAW
tCW
tAS
tWP
tWR
DOUT
DIN
High-Z
High-Z
tDW
tDH
T15V2M16B
High-Z
DON'T CARE
UNDEFINED
NOTES ( WRITE CYCLE ) :
1. A write occurs during the overlap of a low CE , a low WE . A write begins at the lateat
transition among CE goes low, WE going low. A write end at the earliest transition among
CE going high, WE going high. tWP is measured from the beginning of write to the end of
write.
2. tCW is measured from the later of CE going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change.
TM Technology Inc. reserves the right
P. 9
to change products or specifications without notice.
Publication Date: NOV. 2002
Revision:A
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