TGF2022-12 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGF2022-12' PDF : 8 Pages View PDF
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Advance Product Information
September19, 2005
TABLE III
RF CHARACTERIZATION TABLE 1/
(TA = 25 °C, Nominal)
TGF2022-12
PARAMETER
f = 10 GHz
f = 18 GHz
UNITS
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
ΓL 3/, 4/
Efficiency
Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
ΓL 3/, 4/
OIP3
Vd = 10V
Idq = 90 mA
Saturated Output Power
31.9
Power Added Efficiency
52.4
Power Gain
12.9
Parallel Resistance
22.34
Parallel Capacitance
0.552
Load Reflection
coefficient
0.580 ∠ 153.7
Saturated Output Power
31.3
Power Added Efficiency
58.3
Power Gain
13
Parallel Resistance
36.24
Parallel Capacitance
0.503
Load Reflection
coefficient
Output TOI
0.569 ∠137.1
40
Vd = 12V
Idq = 90 mA
32.6
51.9
12.9
28.49
0.515
0.559 ∠145.4
Vd = 10V
Idq = 90 mA
31.1
41.5
8.3
21.77
0.461
0.693 ∠154.8
32.3
30.5
56.0
46.0
13
8.5
37.11
25.65
0.510
0.550
0.577 ∠136.6 0.759 ∠153.5
39
40
Vd = 12V
Idq = 90 mA
31.7
37.0
8.0
24.22
0.481
0.713 ∠153.0
31.1
42.5
8.3
33.49
0.559
0.795 ∠150.6
39
dBm
%
dB
Ω
pF
-
dBm
%
dB
Ω
pF
-
dBm
1/ Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
θJC Thermal Resistance
Vd = 12 V
(channel to backside of carrier) Idq = 90 mA
Pdiss = 1.08 W
TCH
TJC
TM
(oC) (qC/W) (HRS)
145
69 1.6 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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