TGF2022-60 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGF2022-60' PDF : 8 Pages View PDF
SYMBOL
Advance Product Information
September 19, 2005
TABLE III
RF CHARACTERIZATION TABLE 1/
(TA = 25 °C, Nominal)
TGF2022-60
PARAMETER
f = 10 GHz
f = 18 GHz
UNITS
Power Tuned:
Vd = 10V
Vd = 12V
Vd = 10V
Vd = 12V
Idq = 448 mA Idq = 448 mA Idq = 448 mA Idq = 448 mA
Psat
Saturated Output Power
38.8
39.4
37.6
38.1
dBm
PAE
Power Added Efficiency
51.6
50
42
38
%
Gain
Power Gain
12.3
7.8
12.1
7.6
dB
Rp 2/
Parallel Resistance
3.34
4.13
3.41
4.00
Ω
Cp 2/
Parallel Capacitance
3.812
3.607
3.151
3.473
pF
ΓL 3/, 4/
Efficiency
Tuned:
Load Reflection
0.922 ∠ 176.3 0.916 ∠140.4 0.952 ∠176.2 0.955 ∠175.9
-
coefficient
Psat
Saturated Output Power
37.6
39.0
37.2
37.9
dBm
PAE
Power Added Efficiency
57.0
53.8
44.0
41.0
%
Gain
Power Gain
12.4
12.4
7.9
7.6
dB
Rp 2/
Parallel Resistance
6.68
6.49
4.01
4.49
Ω
Cp 2/
Parallel Capacitance
4.425
3.947
3.566
3.736
pF
ΓL 3/, 4/
Load Reflection
coefficient
0.942 ∠173.6 0.931 ∠173.3 0.957 ∠175.9 0.962 ∠175.8
-
1/ Values in this table are from measurements taken from a 0.75mm unit pHEMT cell at 10 and 18 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
TCH
TJC
TM
(oC) (qC/W) (HRS)
θJC Thermal Resistance
Vd = 12 V
(channel to backside of carrier) Idq = 448 mA
Pdiss = 8.96 W
146
14.2 1.4E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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