THBT7011D View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

THBT7011D

DUAL OVERVOLTAGE PROTECTION FOR TELECOM LINE

STMicroelectronics 

1 2 3 4 5 6 7 8

TEST CIRCUITS FOR IPP

Transversal mode

See test

circuit 3

TIP or

RING IPP

GND

THBT7011D

THBT

RP

THERMAL RESISTANCES

Symbol

Rth (j-a) Junction to ambient

Parameter

Value

170

Unit

°C/W

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Symbol

Parameter

VRM Stand-off voltage

IRM Leakage current at stand-off voltage

VR Continuous Reverse voltage

VBR Breakdown voltage

VBO Breakover voltage

IH

Holding current

IBO Breakover current

IPP Peak pulse current

C

Capacitance

I

IPP

IBO

IH

IR

V

VRM VR VBRVBO

STATIC PARAMETERS BETWEEN TIP AND GND, RING AND GND

Type

THBT7011D

IRM @ VRM

max.

µA

V

5

66

IR @ VR

max.

note 1

µA

V

50

70

VBO @ IBO

max. min.

note 2

max.

V

mA

mA

89

50

400

IH

min

note 3

mA

150

C

max

note 4

pF

80

3/8

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