TPDV840 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'TPDV840' PDF : 7 Pages View PDF
Characteristics
1
Characteristics
TPDVxx40
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
IT(RMS)
ITSM
I2t
dI/dt
On-state rms current (180° conduction angle)
Tc = 75 °C
Non repetitive surge peak on-state
current
I2t value for fusing
tp = 2.5 ms
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Tj = 25 °C
Tj = 25 °C
Critical rate of rise of on-state current
IG = 500 mA , dIG/dt = 1 A/µs
Repetitive F = 50 Hz
Non repetitive
VDRM
VRRM
Repetitive peak off-state voltage
TPDV640
TPDV840
TPDV1240
Tj = 125 °C
Tstg
Storage junction temperature range
Tj
Operating junction temperature range
TL
Maximum lead temperature for soldering during 10s at 2mm from case
VINS(RMS)(1) Insulation rms voltage
1. A1, A2, gate terminals to case for 1 minute
40
590
370
350
610
20
100
600
800
1200
- 40 to + 150
- 40 to + 125
260
2500
Table 3.
Symbol
Electrical Characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Quadrant
Value
IGT
VGT
VGD
tgt
IH (1)
VD = 12 V DC, RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
VD = VDRM IG = 500 mA dIG/dt = 3 A/µs
IT = 500 mA Gate open
IL
IG = 1.2 x IGT
MAX. 200
I - II - III
MAX. 1.5
Tj = 125 °C I - II - III MIN.
0.2
I - II - III TYP.
2.5
MAX. 50
I - III
100
TYP.
II
200
dV/dt
VTM (1)
Linear slope up to:
VD = 67 % VDRM Gate open
ITM = 35 A tp = 380 µs
IDRM
IRRM
VDRM = VRRM
(dV/dt)c = 200 V/µs
(dI/dt)c (1)
(dV/dt)c = 10 V/µs
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
MIN. 500
MAX. 1.8
20
MAX.
8
35
MIN.
142
1. For either polarity of electrode A2 voltage with reference to electrode A1.
Unit
A
A
A2S
A/µs
V
°C
°C
V
Unit
mA
V
V
µs
mA
mA
V/µs
V
µA
mA
A/ms
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Doc ID 18270 Rev 1
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