TPDV840 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'TPDV840' PDF : 7 Pages View PDF
TPDVxx40
Characteristics
Table 4. Gate characteristics (maximum values)
Symbol
Parameter
PG(AV)
PGM
IGM
VGM
Average gate power dissipation
Peak gate power dissipation
Peak gate current
Peak positive gate voltage
tp = 20 µs
tp = 20 µs
tp = 20 µs
Table 5. Thermal resistance
Symbol
Parameter
Rth(j-a)
Rth(j-c) DC
Rth(j-c) AC
Junction to ambient
Junction to case for DC
Junction to case for 360 °Conduction angle (F = 50 Hz)
Value
Unit
1
W
40
W
8
A
16
V
Value
50
1.2
0.9
Unit
°C/W
°C/W
°C/W
Figure 1.
Max. rms power dissipation versus Figure 2.
on-state rms current (F = 50 Hz).
(curves limited by (dI/dt)c)
Max. rms power dissipation and
max. allowable temperatures
(Tamb and Tcase) for various Rth
P(W)
60
50
40
30
20
10
0
0
α = 60°
α = 120°
α = 90°
α = 30°
IT(RMS)(A)
5
10
15
20
25
α = 180°
180°
α
α
30
35
40
P(W)
60
50
Rth = 0.75°C/W
40
Rth = 0.5°C/W
30
Rth = 0.25°C/W
Rth = 0°C/W
Tcase(°C)
75
85
95
20
105
10
115
Tamb(°C)
0
125
0
20
40
60
80
100
120
140
Figure 3. On-state rms current versus case Figure 4. Relative variation of thermal
temperature
impedance versus pulse duration
IT(RMS)(A)
50
K=[Zth(j-c)/Rth(j-c)]
1.00
α = 180°
40
30
0.10
Zth(j-c)
20
Zth(j-a)
0.01
10
Tcase(°C)
tp(s)
0
0.0
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 1E+3
Doc ID 18270 Rev 1
3/7
Share Link: 
