UPD78P4916GF-3BA View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
MFG CO.
'UPD78P4916GF-3BA' PDF : 56 Pages View PDF
µPD78P4916
DC Programming Characteristics (TA = +25 ± 5 ˚C, VSS = AVSS = 0 V)
Parameter
Input voltage, high
Input voltage, low
Input leakage current
Output voltage, high
Output voltage, low
Output leakage current
VDD supply voltage
VPP supply voltage
VDD supply current
VPP supply current
Symbol Symbol Note 1
VIH
VIH
VIL
VIL
ILIP
ILI
VOH1
VOH1
VOH2
VOH2
VOL
VOL
ILO
VDDP
VDD
VPP
VPP
IDD
IDD
IPP
IPP
Conditions
0 ≤ VI ≤ VDDP Note 2
IOH = –400 µA
IOH = –100 µA
IOL = 2.1 mA
0 ≤ VO ≤ VDDP, OE = VIH
Program memory write
mode
Program memory read
mode
Program memory write
mode
Program memory read
mode
Program memory write
mode
Program memory read
mode
Program memory write
mode
Program memory read
mode
MIN. TYP. MAX. Unit
2.4
VDDP+0.3 V
–0.3
0.8
V
±10
µA
2.4
V
VDDP–0.7
V
0.45
V
±10
µA
6.25
6.5
6.75
V
4.50
5.0
5.50
V
12.2 12.5 12.8
V
VPP = VDDP
V
50
mA
30
mA
50
mA
1
100
µA
Notes 1. Corresponding symbols of the µPD27C1001A.
2. VDDP is a VDD pin during programming.
41
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