USB2512BI/M2 View Datasheet(PDF) - Microchip Technology
Part Name
Description
MFG CO.
'USB2512BI/M2' PDF : 57 Pages View PDF
USB251xB/xBi
FIGURE 6-1:
SUPPLY RISE TIME MODEL
Voltage
VDD33
tRT33
3.3 V
90%
100%
10%
VSS
t10%
t90%
Time
Note 6-2
The rise time for the 3.3 V supply can be extended to 100 ms max if RESET_N is actively driven
low, typically by another IC, until 1 s after all supplies are within operating range.
TABLE 6-1: DC ELECTRICAL CHARACTERISTICS
Parameter
Symbol MIN TYP
I, IS Type Input Buffer
Low Input Level
High Input Level
Input Leakage
Hysteresis (IS only)
VILI
VIHI
2.0
IIL
-10
VHYSI
250
Input Buffer with Pull-Up (IPU)
Low Input Level
High Input Level
Low Input Leakage
High Input Leakage
VILI
VIHI
2.0
IILL
+35
IIHL
-10
Input Buffer with Pull-Down (IPD)
Low Input Level
High Input Level
Low Input Leakage
High Input Leakage
USB251xB/xBi
ICLK Input Buffer
VILI
VIHI
2.0
IILL
+10
IIHL
-35
Low Input Level
High Input Level
Input Leakage
VILCK
VIHCK
0.9
IIL
-10
MAX Units
Comments
0.8
V TTL Levels
V
+10
A VIN = 0 to VDD33
350
mV
0.8
V TTL Levels
V
+90
A VIN = 0
+10
A VIN = VDD33
0.8
V TTL Levels
V
-10
A VIN = 0
-90
A VIN = VDD33
0.3
V
V
+10
A VIN = 0 to VDD33
DS00001692C-page 40
2010 - 2015 Microchip Technology Inc.
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