VG36128401A View Datasheet(PDF) - Vanguard International Semiconductor

Part Name

Description

MFG CO.

VG36128401A

CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor 

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VIS

Preliminary

VG36128401A

VG36128801A

VG36128161A

CMOS Synchronous Dynamic RAM

Read and Write Cycle (2 of 2)

Burst Length=4, CAS Latency=3

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22

CLK

t

CK3

CKE

CS

RAS

CAS

WE

BS

A10

RAa

ADD

RAa

CAa

CAb

CAc

DQM

Hi-Z

DQ

QAa0 QAa1 QAa2 QAa3

DAb0 DAb1

DAb3

QAc0 QAc1

QAc3

Activate

Command

Bank A

Read

Command

Bank A

Write The Write Data Read

Command

Bank A

is

Masked

with

a

Zero Clock

Command

Bank A

Latency

The Read Data

is Masked with

a Two Clock

Latency

Document : 1G5-0154

Rev.1

Page 51

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