2ED2109S06F View Datasheet(PDF) - Infineon Technologies
Part Name
Description
MFG CO.
'2ED2109S06F' PDF : 26 Pages View PDF
2ED2109 (4) S06F (J)
650 V half bridge gate driver with integrated bootstrap diode
5.14
Maximum switching frequency
The 2ED210x family is capable of switching at higher frequencies as compared to standard half-bridge or high
side / low side gate drivers. They are available in two packages, the PG-DSO-8 and the PG-DSO-14. It is essential
to ensure that the component is not thermally overloaded when operating at higher frequencies. This can be
checked by means of the thermal resistance junction to ambient and the calculation or measurement of the
dissipated power. The thermal resistance is given in the datasheet (section 4) and refers to a specific layout.
Changes of this layout may lead to an increased thermal resistance, which will reduce the total dissipated power
of the driver IC. One should therefore do temperature measurements in order to avoid thermal overload under
application relevant conditions of ambient temperature and housing.
The maximum chip temperature TJ can be calculated with
= Pd ∙ ℎ + _ , where TA_max is the maximum ambient temperature.
The dissipated power Pd by the driver IC is a combination of several sources. These are explained in detail in the
application note “2ED2109 (4) S06F (J) (HVICs)”
Here is the example of the figures which estimates the gate driver IC junction temperature when switching a given
MOSFET at different switching frequencies.
150
Vbus = 400 V
125
Vbus = 200 V
150
Vbus = 400 V
125
Vbus = 200 V
100
100
75
75
50
50
25
25
125 225 325 425 525
25
25
125 225 325 425 525
Frequency (kHz)
Frequency (kHz)
*Assumptions for above curves: LLC topology, Power switch = IPP60R600P6, Ta = 25 °C, VBUS = 400 V, VCC = 12 V,
Rgon = 3.9 Ω, Rgoff = 1 Ω
Figure 24 Estimated TJ vs. Frequencies (Left: DSO-8, Right: DSO-14)
Datasheet
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V 2.022
2020-07-02
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