2N6299 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'2N6299' PDF : 2 Pages View PDF
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SPTECH Product Specification
SPTECH Silicon PNP Darlington Power Transistor
2N6299
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·High DC Current Gain
: hFE= 750(Min) @IC= -4A
·Low Saturation Voltage
·Complement to Type 2N6301
APPLICATIONS
·Designed for general-purpose power amplifier and low
frequency switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-16
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-120
mA
75
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.33 ℃/W
SPTECH website：www.superic-tech.com
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