ACE4606TB
30V Complementary Enhancement Mode Field Effect Transistor
N-channel Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
V(BR)DSS
IDSS
VGS(th)
IGSS
RDS(ON)
gFS
VSD
IS
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VDS=VGS, IDS=250uA
VGS=±20V, VDS=0V
VGS=10V, ID=5A
VGS=4.5V, ID=5A
VDS=5V, ID=7A
IS=1A, VGS=0V
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Qg
Qgs
Qgd
td (on)
tr
td(off)
tf
VGS=10V, VDS=15V,
ID=7A
VGS=10V , VDS=10V
ID=1A, RGS=6Ω
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0V, VDS=15V
f=1MHz
Min.
30
1
Typ.
1.5
23
34
14
11.5
1.6
2.8
11
16
36
20
520
88
62
Max. Unit
V
1
uA
3
V
±100 nA
26
mΩ
45
S
1.2 V
7
A
nC
ns
pF
VER 1.1 3