ACE4606TB View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE4606TB' PDF : 10 Pages View PDF
ACE4606TB
30V Complementary Enhancement Mode Field Effect Transistor
P-channel Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
V(BR)DSS
IDSS
VGS(th)
IGSS
RDS(ON)
gFS
VSD
IS
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
VDS=VGS, IDS=-250uA
VGS=±20V, VDS=0V
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VDS=-5V, ID=-4A
IS=-1A, VGS=0V
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Qg
Qgs
Qgd
td (on)
tr
td(off)
tf
VGS=-10V, VDS=-15V,
ID=-4A
VGS=-10V , VDS=-15V
ID=1A, RGS=6Ω
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
VGS=0V, VDS=-15V
f=1MHz
Crss
Min.
-30
-1
Typ.
-1.5
52
67
10
11.5
2.5
2.2
10
10
18
15
726
90
76
Max. Unit
V
-1 uA
-3
V
±100 nA
58
mΩ
80
S
-1.1 V
-4
A
nC
ns
pF
VER 1.1 4
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