ACE4614BFM View Datasheet(PDF) - ACE Technology Co., LTD.

Part Name

Description

MFG CO.

ACE4614BFM

30V Complementary Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD. 

1 2 3 4 5 6 7 8 9

ACE4614B

30V Complementary Enhancement Mode Field Effect Transistor

Description

The ACE4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate

charge. The complementary MOSFETs may be used in inverter and other applications.

Features

N-channel

 VDS=30V

 ID=9A

 RDS(ON)<14mΩ(VGS=10V)

 RDS(ON)<22mΩ(VGS=4.5V)

P-channel

 VDS=-30V

 ID=-8A

 RDS(ON)<20mΩ(VGS=-10V)

 RDS(ON)<35mΩ(VGS=-4.5V)

Absolute Maximum Ratings

Parameter

Symbol N-channel P-channel Unit

Drain-Source Voltage

VDSS

30

Gate-Source Voltage

VGSS

±20

Drain Current (Continuous) * AC TA=25 OC

TA=70 OC

ID

9

7.2

-30 V

±20 V

-8

-6.4 A

Drain Current (Pulse) * B

IDM

40

-40

Power Dissipation

TA=25 OC

TA=70 OC

PD

2

1.3

2

W

1.3

Operating and Storage Temperature Range TJ,TSTG -55 to 150 -55 to 150 OC

Packaging Type

SOP-8

VER 1.2 1

Share Link: