ACE4614BFM View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE4614BFM' PDF : 9 Pages View PDF
ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
P-channel Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30
V
Zero Gate Voltage Drain Current
IDSS
VDS=-30V, VGS=0V
-1 uA
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
100 nA
Static Drain-Source On-Resistance RDS(ON)
VGS=-10V, ID=-9.7A
VGS=-4.5V, ID=-7A
17.1 20
mΩ
20.7 35
Gate Threshold Voltage
VGS(th) VDS=VGS, ID=-250uA -1
-1.2
-2
V
Forward Transconductance
gFS
VDS=-5V, ID=-8A
21.7
S
Diode Forward Voltage
VSD
Maximum Body-Diode Continuous
Current
IS
ISD=-1A, VGS=0V
-0.74 -1.0 V
-2.1 A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
Td(on)
tf
td(off)
tf
VDS=-15V, ID=-8A
VGS=-10V
VDS=-15V,RGEN=6Ω,
VGS=-10V
RL=15Ω
Dynamic
33.82 43.97
4.93 6.41 nC
5.2 6.76
15.44 30.88
5.04 10.08
ns
71.04 142.08
16.8 33.6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Note.
Ciss
Coss
VDS=-15V, VGS=0V
f=1MHz
Crss
1973 2200
491
pF
231 325
4. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
5. Repetitive rating, pulse width limited by junction temperature.
6. The current rating is based on the t≤10s junction to ambient thermal resistance rating.
VER 1.2 5
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