ACE4614BFM View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE4614BFM' PDF : 9 Pages View PDF
ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Ordering information
ACE4614B XX + H
Halogen - free
Pb - free
FM : SOP-8
N-channel Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
uA
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
100 nA
Static Drain-Source On-Resistance RDS(ON)
VGS=10V, ID=10A
VGS=4.5V, ID=10A
12
14
mΩ
16.5 22
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA 1.4
2
3
V
Forward Transconductance
gFS
VDS=5V, ID=10A
20
S
Diode Forward Voltage
VSD
ISD=1A, VGS=0V
0.74 1.0 V
Maximum Body-Diode Continuous
Current
IS
2.6 A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
Td(on)
tf
td(off)
tf
VDS=15V, ID=10A
VGS=5V
VDS=15V,RGEN=6Ω,
VGS=10V
RL=15Ω
Dynamic
7.65 9.95
2.82 3.67 nC
2.49 3.24
13.92 27.84
2.64 5.28
ns
31.4 62.8
3.28 6.56
Input Capacitance
Output Capacitance
Ciss
886.01
Coss
VDS=15V, VGS=0V
f=1MHz
151
pF
Reverse Transfer Capacitance
Crss
75.77
Note.
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤10s junction to ambient thermal resistance rating.
VER 1.2 2
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