Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

ACT8897Q4I11C-T View Datasheet(PDF) - Active-Semi, Inc

Part Name
Description
MFG CO.
'ACT8897Q4I11C-T' PDF : 32 Pages View PDF
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
ACT8897
Rev 2, 05-Sep-13
Push-Button Response (First Power-Up)
CH1
Manual Reset Response
CH1
CH2
CH2
CH3
CH1: VnPBIN, 2V/div
CH2: VnPBSTAT, 2V/div
CH3: VnRSTO, 2V/div
TIME: 100ms/div
nPBIN Resistor = 50k
CH3
CH1: VnPBIN, 2V/div
CH2: VnPBSTAT, 2V/div
CH3:VnRSTO , 2V/div
TIME: 100ms/div
nPBIN Resistor = 0
REG1 Efficiency vs. Output Current
100
VOUT = 3.3V
80
VIN = 3.6V
VIN = 4.2V
60
VIN = 5.0V
40
20
0
1
10
100
1000
Output Current (mA)
REG2 Efficiency vs. Output Current
100 VOUT = 1.2V
VIN = 3.6V
80
VIN = 5.0V
60
VIN = 4.2V
40
20
0
1
10
100
1000
Output Current (mA)
REG3 Efficiency vs. Output Current
100 VOUT = 1.35V VIN = 3.6V
80
60
VIN = 4.2V
VIN = 5.0V
40
20
0
1
10
100
1000
Output Current (mA)
Innovative PowerTM
- 17 -
Active-Semi ProprietaryFor Authorized Recipients and Customers
ActivePMUTM is trademark of Active-Semi.
I2CTM is a trademark of NXP.
www.active-semi.com
Copyright © 2013 Active-Semi, Inc.
Share Link: GO URL

All Rights Reserved © qdatasheet.com  [ Privacy Policy ] [ Contact Us ]