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ACT8897Q4I11C-T View Datasheet(PDF) - Active-Semi, Inc

Part Name
Description
MFG CO.
'ACT8897Q4I11C-T' PDF : 32 Pages View PDF
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
ACT8897
Rev 2, 05-Sep-13
Dropout Voltage vs. Output Current
300
250
200
REG7
150
100
50
0
0
VIN = 3.3V
50
100
150
200 250 300
Output Current (mA)
Output Voltage vs. Temperature
4.00
3.50
3.00
REG7
2.50
2.00
1.50
1.00
REG4, REG5, REG6
0.50
0
-40 -20
0 20 40 60 80 100 120
Temperature (°C)
Region of Stable COUT ESR vs. Output Current
1
LDO Output Voltage Noise
0.1
Stable ESR
0.01
0
50
100
150
200
250
Output Current (mA)
CH1
CH1: VOUTx, 200µV/div (AC COUPLED)
TIME: 200ms/div
Innovative PowerTM
- 20 -
Active-Semi ProprietaryFor Authorized Recipients and Customers
ActivePMUTM is trademark of Active-Semi.
I2CTM is a trademark of NXP.
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Copyright © 2013 Active-Semi, Inc.
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