ACT8897Q4I11C-T View Datasheet(PDF) - Active-Semi, Inc
Part Name
Description
MFG CO.
'ACT8897Q4I11C-T' PDF : 32 Pages View PDF
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
ACT8897
Rev 2, 05-Sep-13
3.310
REG1 Output Voltage vs. Temperature
VOUT1 = 3.3V
ILOAD = 100mA
3.306
3.302
3.298
3.294
3.290
-40 -20
0 20 40 60 80
Temperature (°C)
100 120
1.310
1.306
REG2 Output Voltage vs. Temperature
VOUT2 = 1.3V
ILOAD = 100mA
1.302
1.298
1.294
1.290
-40 -20
0 20 40 60 80
Temperature (°C)
100 120
1.360
REG3 Output Voltage vs. Temperature
VOUT3 = 1.35V
ILOAD = 100mA
1.356
1.352
1.348
1.344
1.340
-40 -20
0 20 40 60 80 100 120
Temperature (°C)
REG1, 2, 3 MOSFET Resistance
350 ILOAD = 100mA
300
250
200
PMOS NMOS
150
100
50
0
3.0
3.5
4.0
4.5
5.0
5.5
Input Voltage (V)
Innovative PowerTM
- 18 -
Active-Semi Proprietary―For Authorized Recipients and Customers
ActivePMUTM is trademark of Active-Semi.
I2CTM is a trademark of NXP.
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Copyright © 2013 Active-Semi, Inc.
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