AP30N30WI View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP30N30WI' PDF : 4 Pages View PDF
AP30N30WI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=10mA
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=10mA
Static Drain-Source On-Resistance2 VGS=10V, ID=15A
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
IGSS
Gate-Source Leakage
Qg
Total Gate Charge2
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Source-Drain Diode
VDS=VGS, ID=1mA
VDS=10V, ID=15A
VDS=250V, VGS=0V
VDS=250V ,VGS=0V
VGS= ±30V
ID=15A
VDS=200V
VGS=10V
VDS=125V
ID=15A
RG=10Ω,VGS=10V
RD=8.3Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=15A, VGS=0V
dI/dt=100A/µs
250 -
-
V
- 0.24 - V/℃
-
- 68 mΩ
1.5 - 3.5 V
-
23
-
S
-
-
1 uA
-
- 200 uA
-
- ±1 uA
- 63 100 nC
-
19
-
nC
-
14
-
nC
-
28
-
ns
-
36
-
ns
-
84
-
ns
-
45
-
ns
- 4290 6900 pF
- 550 - pF
-
6
- pF
- 1.9 3
Ω
Min. Typ. Max. Units
-
- 1.5 V
- 235 -
ns
- 2.24 - µC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
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