AP30N30WI View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP30N30WI' PDF : 4 Pages View PDF
AP30N30WI
16
I D = 15 A
12
V DS = 120 V
V DS = 160 V
V DS = 200 V
8
f=1.0MHz
10000
C iss
1000
C oss
100
4
0
0
20
40
60
80
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
10
C rss
1
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100
100us
10
1ms
10ms
1
T c =25 o C
Single Pulse
100ms
1s
DC
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.01
0.00001
0.1
30
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
40
V DS =5V
30
T j =25 o C
T j =150 o C
20
10
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
VG
10V
QGS
QG
QGD
201216053-1/4
Charge
Q
Fig 12. Gate Charge Waveform
4/4
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