AP30N30WI View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP30N30WI' PDF : 4 Pages View PDF
50
T C = 25 o C
40
30
10V
7.0V
6.0V
20
5.0V
10
V G =4. 5 V
0
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
190
I D =15A
T C =25 o C
150
110
70
30
2
4
6
8
10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
15
12
9
T j =150 o C
6
T j =25 o C
3
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP30N30WI
40
T C = 150 o C
30
20
10
10V
7.0V
6.0V
5.0V
V G =4. 5 V
0
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I D =15A
2.3
V G =10V
1.8
30
1.3
0.8
0.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.5
42
1.0
0.5
201216053-1/4
0.0
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
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