AT45DB021B-CC View Datasheet(PDF) - Atmel Corporation
Part Name
Description
MFG CO.
'AT45DB021B-CC' PDF : 32 Pages View PDF
AT45DB021B
10. Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
FLASH MEMORY ARRAY
PAGE (256 BYTES)
BUFFER 1 TO
PAGE PROGRAM
BUFFER 1 (256 BYTES)
PAGE PROGRAM
THROUGH BUFFER 2
BUFFER 2 TO
PAGE PROGRAM
BUFFER 2 (256 BYTES)
BUFFER 1
WRITE
PAGE PROGRAM
THROUGH BUFFER 1
I/O INTERFACE
BUFFER 2
WRITE
SI
10.1 Main Memory Page Program through Buffers
CS
SI
CMD
r r r r r, PA9-7 PA6-0, BFA8
BFA7-0
n
· Completes writing into selected buffer
· Starts self-timed erase/program operation
n+1
Last Byte
10.2 Buffer Write
CS
SI
CMD
X
X···X, BFA8 BFA7-0
n
· Completes writing into selected buffer
n+1
Last Byte
10.3 Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)
Starts self-timed erase/program operation
CS
SI
CMD
r r r r r, PA9-7 PA6-0, X
X
Each transition represents
8 bits and 8 clock cycles
n = 1st byte read
n+1 = 2nd byte read
17
1937J–DFLSH–9/05
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