ATF-501P8 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
MFG CO.
ATF-501P8
HP => Agilent Technologies
'ATF-501P8' PDF : 23 Pages View PDF
Agilent ATF-501P8 High Linearity
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Description
Agilent Technologies’s ATF-
501P8 is a single-voltage high
linearity, low noise E-pHEMT
housed in an 8-lead JEDEC-
standard leadless plastic chip
carrier (LPCC[3]) package. The
device is ideal as a medium-
power amplifier. Its operating
frequency range is from 400 MHz
to 3.9 GHz.
The thermally efficient package
measures only 2mm x 2mm x
0.75mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85ºC. All devices
are 100% RF & DC tested.
Notes:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin Connections and
Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
0Px
Pin 7 (Drain)
Pin 6
Pin 4 (Source)
Pin 5
Top View
Note:
Package marking provides orientation and
identification:
“0P” = Device Code
“x” = Date code indicates the month of
manufacture.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Features
• Single voltage operation
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product
specifications
• Small package size: 2.0 x 2.0 x
0.75 mm3
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option
available
Specifications
• 2 GHz; 4.5V, 280 mA (Typ.)
• 45.5 dBm Output IP3
• 29 dBm Output Power at 1dB gain
compression
• 1 dB Noise Figure
• 15 dB Gain
• 14.5 dB LFOM[4]
• 65% PAE
• 23oC/W thermal resistance
Applications
• Front-end LNA Q2 and Q3, Driver or
Pre-driver Amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
• Driver Amplifier for WLAN, WLL/
RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
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