ATF-501P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4.5V, Ids = 280 mA
V
0.42
0.55
0.67
Vth
Threshold Voltage
Vds = 4.5V, Ids = 32 mA
V
—
0.33
—
Idss
Saturated Drain Current
Vds = 4.5V, Vgs = 0V
µA
—
5
—
Gm
Transconductance
Vds = 4.5V, Gm = ∆Ids/∆Vgs; mmho
—
∆Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
1872
—
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4.5V
µA
-30
-0.8
—
NF
Noise Figure[1]
f = 2 GHz
f = 900 MHz
dB
—
1
—
dB
—
—
—
G
Gain[1]
f = 2 GHz
f = 900 MHz
dB
13.5
15
16.5
dB
—
16.6
—
OIP3
Output 3rd Order Intercept Point[1,2]
f = 2 GHz
f = 900 MHz
dBm
43
dBm
—
45.5
—
42
—
P1dB
Output 1dB Compressed[1]
f = 2 GHz
f = 900 MHz
dBm
27.5
29
—
dBm
—
27.3
—
PAE
Power Added Efficiency[1]
f = 2 GHz
f = 900 MHz
%
50
65
—
%
—
49
—
ACLR
Adjacent Channel Leakage
Power Ratio[1,3]
Offset BW = 5 MHz
Offset BW = 10 MHz
dBc
—
63.9
—
dBc
—
64.1
—
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 2 while measurement at 0.9GHz obtained from load pull tuner.
2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.
ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
4. Use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded.
See absolute max ratings and application note for more details.
Input
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Input
Matching
Circuit
Γ_mag=0.79
Γ_ang=-164°
(1.1 dB loss)
DUT
Output
Matching
Circuit
Γ_mag=0.69
Γ_ang=-163°
(0.9 dB loss)
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE measurements at 2 GHz. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3