ATF-501P8 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
MFG CO.
ATF-501P8
HP => Agilent Technologies
'ATF-501P8' PDF : 23 Pages View PDF
ATF-501P8 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
IGS
Pdiss
Pin max.
TCH
TSTG
θch_b
Parameter
Drain–Source Voltage[2]
Gate–Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
Gate Current
Total Power Dissipation[3]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance[4]
Units
V
V
V
A
mA
W
dBm
°C
°C
°C/W
Absolute
Maximum
7
-5 to 0.8
-5 to 1
1
12
3.5
30
150
-65 to 150
23
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 43.5 mW/°C for TB > 69.5°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
800
Vgs=0.7V
700
600
Vgs=0.65V
500
Vgs=0.6V
400
300
Vgs=0.55V
200
Vgs=0.5V
100
0
0
1
2
3
4
5
6
Vds (V)
Figure 1. Typical IV curve
(Vgs = 0.01V) per step.
100
Cpk=1.61
Stdev=0.33
80
60
–3 Std
40
+3 Std
20
0
13
14
15
16
17
GAIN (dB)
Figure 4. Gain.
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA[5,6]
120
Cpk=1.76
100 Stdev=0.3
120
Cpk=1.51
100 Stdev=3.38
80
–3 Std
60
+3 Std
80
–3 Std
60
+3 Std
40
40
20
20
0
27.5 28 28.5 29 29.5 30 30.5
P1dB (dBm)
Figure 2. P1dB.
0
45
55
65
75
85
PAE (%)
Figure 3. PAE.
100
Cpk=1.1
Stdev=0.87
80
60
–3 Std
40
+3 Std
20
0
42 43 44 45 46 47 48 49 50
OIP3 (dBm)
Figure 5. OIP3.
Notes:
5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
2
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