ATF-551M4 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
MFG CO.
ATF-551M4
HP => Agilent Technologies
'ATF-551M4' PDF : 24 Pages View PDF
ATF-551M4 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
IGS
Pdiss
Pin max.
TCH
TSTG
θjc
Parameter
Drain-Source Voltage[2]
Gate-Source Voltage[2]
Gate Drain Voltage [2]
Drain Current [2]
Gate Current[5]
Total Power Dissipation [3]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance [4]
Units
V
V
V
mA
mA
mW
dBm
°C
°C
°C/W
Absolute
Maximum
5
-5 to 1
-5 to 1
100
1
270
+10
150
-65 to 150
240
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
6 mW/°C for TL > 40°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. Device can safely handle +10 dBm RF Input
Power provided IGS is limited to 1 mA. IGS at
P1dB drive RF level is bias circuit dependent.
See applications section for additional
information.
70
60
50
40
30
20
10
0
0 12 3 45
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
0.7 V
0.6 V
0.5 V
0.4 V
0.3 V
67
Product Consistency Distribution Charts [6]
180
150
160
Cpk = 1.64
Cpk = 2.85
Cpk = 2.46
Stdev = 0.19
Stdev = 0.25
Stdev = 0.06
150
120
120
120
-3 Std
+3 Std
90
-3 Std
90
+3 Std
80
60
60
40
30
30
0
15
16
17
18
19
GAIN (dBm)
Figure 2. Capability Plot for Gain @ 2.7 V,
10 mA. LSL = 15.5, Nominal = 17.5,
USL = 18.5
0
22
23
24
25
26
OIP3
Figure 3. Capability Plot for OIP3 @ 2.7 V,
10 mA. LSL = 22.0, Nominal = 24.1
0
0.29
0.49
0.69
NF
0.89
1.09
Figure 4. Capability Plot for NF @ 2.7 V,
10 mA. Nominal = 0.5, USL = 0.9
Note:
6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match
and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements.
2
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