ATF-551M4 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
MFG CO.
ATF-551M4
HP => Agilent Technologies
'ATF-551M4' PDF : 24 Pages View PDF
ATF-551M4 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 2.7V, Ids = 10 mA
V
0.3
0.47
0.65
Vth
Threshold Voltage
Vds = 2.7V, Ids = 2 mA
V
0.18
0.37
0.53
Idss
Saturated Drain Current
Vds = 2.7V, Vgs = 0V
µA
—
0.1
3
Gm
Transconductance
Vds = 2.7V, gm = ∆Idss/∆Vgs; mmho
110
220
285
∆Vgs = 0.75 – 0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = -2.7V
µA
—
—
95
NF
Noise Figure [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
dB
—
0.5
0.9
Vds = 3V, Ids = 20 mA
dB
—
0.5
—
Gain
Gain [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
dB
Vds = 3V, Ids = 20 mA
dB
15.5
17.5
18.5
—
18.0
—
OIP3
Output 3rd Order
f = 2 GHz Vds = 2.7V, Ids = 10 mA
dBm
22
24.1
—
Intercept Point[1]
Vds = 3V, Ids = 20 mA
dBm
—
30.0
—
P1dB
1dB Compressed
Output Power [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
dBm
—
Vds = 3V, Ids = 20 mA
dBm
—
14.6
—
16.0
—
Notes:
1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from
4 wafers.
Input
50Ω Input
Input
Output
50Ω Output
Output
Transmission
Matching Circuit
Matching Circuit
Transmission
Line Including
Γ_mag = 0.3
DUT
Γ_mag = 0.3
Line Including
Gate Bias T
Γ_ang = 11°
Γ_ang = 9°
Gate Bias T
(0.3 dB loss)
(0.3 dB loss)
(0.9 dB loss)
(0.3 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-
embedded from actual measurements.
ATF-551M4 Electrical Specifications (see notes 2 and 3, as indicated)
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Fmin
Minimum Noise Figure [2] f = 900 GHz Vds = 2.7V, Ids = 10 mA
dB
—
0.27
—
f = 2 GHz Vds = 2.7V, Ids = 10 mA
dB
—
0.41
—
f = 3.9 GHz Vds = 2.7V, Ids = 10 mA
dB
—
0.61
—
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA
dB
—
0.88
—
Ga
Associated Gain [2]
f = 900 GHz Vds = 2.7V, Ids = 10 mA
dB
—
21.8
—
f = 2 GHz Vds = 2.7V, Ids = 10 mA
dB
—
17.9
—
f = 3.9 GHz Vds = 2.7V, Ids = 10 mA
dB
—
14.2
—
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA
dB
—
12.0
—
OIP3
Output 3rd Order
f = 900 GHz Vds = 2.7V, Ids = 10 mA
dBm
—
22.1
—
Intercept Point[3]
f = 3.9 GHz Vds = 2.7V, Ids = 10 mA
dBm
—
24.3
—
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA
dBm
—
24.5
—
P1dB
1dB Compressed
Output Power [3]
f = 900 GHz Vds = 2.7V, Ids = 10 mA
dBm
—
f = 3.9 GHz Vds = 2.7V, Ids = 10 mA
dBm
—
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA
dBm
—
14.3
—
14.5
—
14.3
—
Notes:
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
3
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