ATF-551M4 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
MFG CO.
ATF-551M4
HP => Agilent Technologies
'ATF-551M4' PDF : 24 Pages View PDF
ATF-551M4 Typical Performance Curves, continued
30
25
20
15
10
2V 10 mA
2.7V 10 mA
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 16. Gain vs. Bias over Frequency[1].
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2V 10 mA
2.7V 10 mA
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 17. Fmin vs. Bias over Frequency[2].
26
25
24
23
22
21
20
19
2V 10 mA
2.7V 10 mA
18
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 18. OIP3 vs. Bias over Frequency[1].
16
14
12
10
8
6
4
2
0
-2
2V 10 mA
-4
2.7V 10 mA
-6
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 19. IIP3 vs. Bias over Frequency[1].
16
15
14
13
12
11
2V 10 mA
2.7V 10 mA
10
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 20. P1dB vs. Bias over Frequency[1].
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V,
10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test
board requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double
stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
6
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