BSM100GT120DN2 View Datasheet(PDF) - Siemens AG
Part Name
Description
MFG CO.
'BSM100GT120DN2' PDF : 9 Pages View PDF
IGBT Power Module
Target data sheet
• Three single switches
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• Solderable Terminals
Type
BSM 100 GT 120 DN2
VCE IC
Package
1200V 150A TRIPACK
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
BSM 100 GT 120 DN2
Ordering Code
C67070-A2520-A67
Values
Unit
1200
V
1200
± 20
A
150
100
300
200
W
680
+ 150
°C
-55 ... + 150
≤ 0.182
K/W
≤ 0.36
2500
Vac
16
mm
11
F
-
55 / 150 / 56
Semiconductor Group
1
Aug-23-1996
Share Link: 
