BYT200PIV-400 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BYT200PIV-400' PDF : 5 Pages View PDF
BYT200PIV-400
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
Per leg
Total
Coupling
Value
0.55
0.33
0.1
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR * Reverse leakage current
VF ** Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 100°C
Tj = 25°C
IF = 100 A
Tj = 125°C IF = 100 A
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2%
Min. Typ. Max. Unit
120 µA
4
12
mA
1.6
V
0.95 1.4
RECOVERY CHARACTERISTICS
Symbol
Parameter
trr
Reverse recovery time
IRM Reverse recovery current
S factor Softness factor
tfr
Forward recovery time
VFP Peak forward voltage
Test Conditions
Min.
IF=0.5A IR=1A Irr=0.25A
IF=1A dI/dt= -50A/µs
Vr=30V
dIF/dt=-200A/µs Tj=125°C
VR=400V
IF=100A
dIF/dt=-200A/µs Tj=125°C
VR=400V
IF=100A
IF=100A
dIF/dt=500A/µs
Measured at 1.1 x VF max.
Tj=25°C
Typ.
55
0.25
Max.
100
40
500
12
Unit
ns
A
ns
V
To evaluate the conduction losses use the following equation :
P = 0.8 x IF(AV) + 0.00228 x IF2(RMS)
2/5
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