BYT200PIV-400 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BYT200PIV-400' PDF : 5 Pages View PDF
BYT200PIV-400
Fig. 7: Junction capacitance versus reverse voltage
applied (typical values, per diode).
Fig. 8: Recovery charges versus dIF/dt (per diode).
C(pF)
500
450
400
350
300
250
200
150
100
1
VR(V)
10
F=1MHz
Tj=25°C
100 200
Qrr(µC)
3.0
2.5
IF=IF(av)
90% confidence
Tj=125°C
2.0
1.5
1.0
0.5
0.0
0
100
dIF/dt(A/µs)
200
300
400
500
Fig. 9: Recovery current versus dIF/dt (per diode).
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode).
IRM(A)
50
45
40
35
30
25
20
15
10
5
0
0
IF=IF(av)
90% confidence
Tj=125°C
100
dIF/dt(A/µs)
200
300
400
500
VFP(V)
14
IF=IF(av)
12
90% confidence
Tj=125°C
10
8
6
4
2
dIF/dt(A/µs)
0
0 100 200 300 400 500 600 700 800
Fig. 11: Dynamic parameters versus junction
temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]
1.25
1.00
0.75
0.50
0.25
0.00
0
IRM
Qrr
Tj(°C)
25
50
75
100 125 150
4/5
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