BYT200PIV-400 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BYT200PIV-400' PDF : 5 Pages View PDF
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
BYT200PIV-400
Fig. 2: Peak current versus form factor (per diode).
PF(av)(W)
140
120
100
80
δ = 0.1
δ = 0.05
δ = 0.2
δ = 0.5
δ= 1
60
40
20
IF(av) (A)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
IM(A)
500
400
300
P=75W
200
P=100W
P=125W
P=150W
100
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 3: Average forward current versus ambient
temperature (δ = 0.5, per diode).
Fig. 4: Non repetitive surge peak forward current
versus overload duration (per diode).
IF(av)(A)
120
100
Rth(j-a)=Rth(j-c)
80
60
40
Rth(j-a)=2°C/W
20
Tamb(°C)
0
0
25
50
75
100
125
150
IM(A)
700
600
500
400
300
200
100
0
1E-3
Tc=50°C
Tc=75°C
1E-2
t(s)
Tc=100°C
1E-1
1E+0
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Fig. 6: Forward voltage drop versus forward current
(maximum values, per diode).
K=[Zth(j-c)/Rth(j-c)]
1.0
δ = 0.5
0.5
δ = 0.2
δ = 0.1
0.2
Single pulse
0.1
1E-3
1E-2
tp(s)
1E-1
IFM(A)
500
100
Tj=125°C
10
Tj=25°C
1E+0
VFM(V)
1
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
3/5
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