C8051T603 View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

MFG CO.

C8051T603

Mixed Signal OTP EPROM MCU Family

Silicon Laboratories 

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C8051T600/1/2/3/4/5/6

8. Electrical Characteristics

8.1. Absolute Maximum Specifications

Table 8.1. Absolute Maximum Ratings

Parameter

Conditions

Min Typ Max Units

Ambient temperature under bias

–55

Storage temperature

–65

Voltage on RST or any Port I/O pin VDD > 2.2 V

–0.3

(except VPP during programming) with VDD < 2.2 V

–0.3

respect to GND

Voltage on VPP with respect to GND VDD > 2.4 V

–0.3

during a programming operation

Duration of High-voltage on VPP pin VPP > (VDD + 3.6 V)

—

(cumulative)

Voltage on VDD with respect to GND Regulator in Normal Mode –0.3

Regulator in Bypass Mode –0.3

Maximum total current through VDD or

—

GND

Maximum output current sunk or

—

sourced by RST or any Port pin

—

125

°C

—

150

°C

—

5.8

V

— VDD + 3.6 V

—

7.0

V

—

10

s

—

4.2

V

—

1.98

V

—

500

mA

—

100

mA

Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the devices at those or any other conditions above

those indicated in the operation listings of this specification is not implied. Exposure to maximum rating

conditions for extended periods may affect device reliability.

30

Rev. 1.2

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