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CHA2296-99F/00 View Datasheet(PDF) - United Monolithic Semiconductors

Part Name
Description
MFG CO.
CHA2296-99F/00
UMS
United Monolithic Semiconductors UMS
'CHA2296-99F/00' PDF : 7 Pages View PDF
1 2 3 4 5 6 7
CHA2296
9- 19GHz Buffer Splitter Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2296 is a broadband buffer splitter
three-stage monolithic amplifier.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
IN
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
OUT 1
Vd
Vg
OUT 2
Main Features
Broadband performance : 9-19GHz
14dBm saturated output power.
16dB ±1.5dB gain
Very good broadband matching
Low DC power consumption, 190mA @ 3.5V
Chip size : 2.26 X 1.33 X 0.10 mm
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
Parameter
Operating frequency range
Small signal gain
Psat
Saturated Output power
Id_small signal Bias current
Typical on wafer measurements : Gain (dB)
20
19
18
17
16
15
14
13
12
Gain channel 1
11
Gain channel 2
10
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Frequency (GHz)
Min Typ Max Unit
9
19
GHz
13
16
dB
12
14
dBm
190
250
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. :DSCHA22962044 13-Feb.-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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