CHA5051-QDG View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
CHA5051-QDG
United Monolithic Semiconductors
'CHA5051-QDG' PDF : 10 Pages View PDF
CHA5051-QDG
RoHS COMPLIANT
7-16GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA5051-QDG is a high gain three-
stage monolithic medium power amplifier.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate.
It is supplied in lead-free SMD package
Main Features
■ Broadband performance 7-16GHz
■ 25dB gain & 3.2dB noise figure
■ RF ports ESD protected (see page 8)
■ 25dBm output power @ 1dB compression
■ DC power consumption, 310mA @ 4.5V
■ 24LQFN4x4
Typical on board measurements
Main Characteristics
Tamb. = 25°C, Vd = 4.5V
Symbol
Parameter
Fop
G
NF
P1dB
Id
Operating frequency range
Small signal gain
Noise figure
Output power at 1dB gain compression
Bias current
Min Typ Max Unit
7
16
GHz
25
dB
3.2
dB
25
dBm
310
mA
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA5051-QDG7152 - 01 Jun 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
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