CMF20120D View Datasheet(PDF) - Cree, Inc
Part Name
Description
MFG CO.
'CMF20120D' PDF : 8 Pages View PDF
CMF20120D-Silicon Carbide Power MOSFET VDS
1200 V
Z-FeTTM MOSFET
ID(MAX)
42 A
N-Channel Enhancement Mode RDS(o n) 80mΩ
Features
• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low RDS(on)
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased System Switching Frequency
Applications
• Solar Inverters
• High Voltage DC/DC Converters
• Motor Drives
• Switch Mode Power Supplies
• UPS
Package
TO-247-3
Part Number
CMF20120D
Package
TO-247-3
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
ID
Continuous Drain Current
IDpulse Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
EAR
Repetitive Avalanche Energy
42
VGS@20V, TC = 25˚C
A
24
VGS@20V, TC = 100˚C
90
A Pulse width tP limited by Tjmax
TC = 25˚C
2.2
J ID = 20A, VDD = 50 V,
L = 9.5 mH
1.5
J tAR limited by Tjmax
Fig. 10
Fig. 15
IAR
Repetitive Avalanche Current
20
A ID = 20A, VDD = 50 V, L = 3 mH
tAR limited by Tjmax
VGS Gate Source Voltage
-5/+25 V
Ptot
Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL
Solder Temperature
Md
Mounting Torque
215
-55 to
+135
260
1
8.8
W TC=25˚C
˚C
Fig. 9
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1
CMF20120D Rev. D
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