DSPIC30F2011CT-20E/SP View Datasheet(PDF) - Microchip Technology
Part Name
Description
MFG CO.
'DSPIC30F2011CT-20E/SP' PDF : 206 Pages View PDF
dsPIC30F2011/2012/3012/3013
TABLE 20-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
-40°C ≤ TA ≤ +125°C for Extended
Param
No.
Symbol
Characteristic
Min Typ(1) Max Units
Conditions
Data EEPROM Memory(2)
D120 ED
Byte Endurance
100K 1M
— E/W -40°C ≤ TA ≤ +85°C
D121 VDRW VDD for Read/Write
VMIN —
5.5
V Using EECON to Read/Write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
2
— ms
D123 TRETD Characteristic Retention
40 100
— Year Provided no other specifications
are violated
D124 IDEW IDD During Programming
—
10
30 mA Row Erase
Program Flash Memory(2)
D130 EP
Cell Endurance
10K 100K — E/W -40°C ≤ TA ≤ +85°C
D131 VPR
VDD for Read
VMIN —
5.5
V VMIN = Minimum operating
voltage
D132 VEB
VDD for Bulk Erase
4.5 —
5.5
V
D133 VPEW VDD for Erase/Write
3.0 —
5.5
V
D134 TPEW Erase/Write Cycle Time
1
—
2
ms
D135 TRETD Characteristic Retention
40 100
— Year Provided no other specifications
are violated
D136 TEB
ICSP™ Block Erase Time
—
4
— ms
D137 IPEW IDD During Programming
—
10
30 mA Row Erase
D138 IEB
IDD During Programming
—
10
30 mA Bulk Erase
Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated.
2: These parameters are characterized but not tested in manufacturing.
DS70139F-page 156
© 2008 Microchip Technology Inc.
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