E28F200BVB80 View Datasheet(PDF) - Intel
Part Name
Description
MFG CO.
'E28F200BVB80' PDF : 55 Pages View PDF
2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
4.4 DC Characteristics—Commercial (Continued)
Sym
Parameter
Prod
BV-60
BV-80
BV-120
VCC 3.3 ± 0.3 V 5 V ± 10% Unit Test Conditions
Note Min Max Min Max
VID A9 Intelligent Identifier
Voltage
11.4 12.6 11.4 12.6 V
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH1 Output High Voltage (TTL)
VOH2 Output High Voltage (CMOS)
–0.5 0.8 –0.5 0.8 V
2.0 VCC + 2.0 VCC + V
0.5V
0.5V
0.45
0.45
V VCC = VCC Min
IOL = 5.8 mA
2.4
2.4
V VCC = VCC Min
IOH = –2.5 mA
0.85 ×
VCC
0.85 ×
VCC
V VCC = VCC Min
IOH = –2.5 mA
VCC–
0.4V
VCC–
0.4V
V VCC = VCC Min
IOH = –100 µA
VPPLK VPP Lock-Out Voltage
3 0.0 1.5 0.0 1.5 V Total Write Protect
VPPH1 VPP (Prog/Erase Operations)
4.5 5.5 4.5 5.5
V VPP at 5 V
VPPH2 VPP (Prog/Erase Operations)
11.4 12.6 11.4 12.6 V VPP at 12 V
VLKO VCC Erase/Prog Lock Voltage 8
2.0
2.0
V
VHH RP# Unlock Voltage
11.4 12.6 11.4 12.6 V Boot Block Unlock
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0 V, T = +25 °C. These currents are valid for all
product versions (packages and speeds).
2. ICCES is specified with the device deselected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Block erases and word/byte programs are inhibited when VPP = VPPLK, and not guaranteed in the range between VPPH1 and
VPPLK.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces ICCR to less than 1 mA typical, in static operation.
6. CMOS Inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL Inputs are either VIL or VIH.
7. For the 28F002B, address pin A10 follows the COUT capacitance numbers.
8. For all BV/CV parts, VLKO = 2.0 V for both 3.3 V and 5 V operations.
32
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