E910.27A View Datasheet(PDF) - ELMOS Semiconductor AG
Part Name
Description
MFG CO.
'E910.27A' PDF : 50 Pages View PDF
- Preliminary -
E910.27A
Parameter
Condition
Capacitor between VS and CDRV
ceramic (X7R) or better
Continuous power dissipation
Derate 7.5mW/°C above +20°C
@ TA = +20°C
Continuous power dissipation 1)
Derate 25mW/°C above +105°C
@ TA = +105°C
Thermal resistance junction to ambient
Thermal resistance junction to ambient
1) PCB heat sink area 500mm²
Thermal resistance junction to case
Operating temperature
Junction temperature
Storage temperature
1) Package mounted on FR4 50x50x1.5mm³; 70µ Cu, zero airflow
Symbol
CDR
PVTOT
PVTOT
RTJA
RTJACLD
RTJC
TA
TJ
TSTG
Min.
150
-
-
-
-
-
-40
-40
-40
Max.
-
1000
800
160
40
5
125
140
150
Unit
nF
mW
mW
K/W
K/W
K/W
°C
°C
°C
This integrated circuit can be damaged by ESD. ELMOS Semiconductor AG recommends that all integrated
circuits must be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage. ESD damage can range from subtile performance degradation to complete
device failure.
ELMOS Semiconductor AG
Specification 8 / 50
03SP0357E.00 05.09.2006
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