E910.27A View Datasheet(PDF) - ELMOS Semiconductor AG
Part Name
Description
MFG CO.
'E910.27A' PDF : 50 Pages View PDF
- Preliminary -
E910.27A
4.2 Recommended Operating Conditions
Parameters are guaranteed within the range of operating conditions unless otherwise specified.
-40°C < TJ < 125°C
Parameter
Supply voltage
Supply bypass capacitance
Source impedance at VFB
External reference voltage at RFEX
Linear regulator bypass capacitance
Driver regulator bypass capacitance
ERR output current
PWGD output current
POR and WD timing capacitance
DSW max. reverse recovery time
Operating temperature Range
Condition
Symbol
Min.
100nF bypass, ceramic (X7R)
VS
5
ceramic (X7R) or better
CIN
100
RFB1//RFB2
RVFB
-
Zi < 2kOhm
VRFEX
0
ceramic (X7R) or better
CSM
1
ceramic (X7R) or better
CDR
330
VERRL < 0.50V
IERR
0.2
VPWGD < 0.50V
IPWGD
0.2
ceramic (NPO / X7R)
CDLY
0
IF/ IR = 2A
TRR
-
PVTOT within limits
TOP
- 40
Max.
Unit
40
V
-
nF
2
kOhm
1.30
V
10
µF
1000
nF
2
mA
2
mA
1
µF
30
ns
105
°C
All voltages are referred to GND, and currents are positive when flowing into the node unless otherwise
specified.
ELMOS Semiconductor AG
Specification 9 / 50
03SP0357E.00 05.09.2006
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