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K4B2G1646C-HCF8 View Datasheet(PDF) - Samsung

Part Name
Description
MFG CO.
K4B2G1646C-HCF8
Samsung
Samsung Samsung
'K4B2G1646C-HCF8' PDF : 64 Pages View PDF
K4B2G1646C
datasheet
Rev. 1.11
DDR3 SDRAM
Begin point : Rising edge of CK - CK
with ODT being first registered low
CK
CK
VRTT_Nom
DQ, DM
DQS , DQS
TDQS , TDQS
VSW2
tAOFPD
End point Extrapolated point at VRTT_Nom
VSW1
TSW2
TSW1
VTT
VSSQ
Figure 17. Definition of tAOFPD
Begin point : Rising edge of CK - CK
defined by the end point of ODTLcnw
Begin point : Rising edge of CK - CK defined by
the end point of ODTLcwn4 or ODTLcwn8
CK
VTT
CK
VRTT_Nom
tADC
End point Extrapolated point at VRTT_Nom
DQ, DM
DQS , DQS
TDQS , TDQS
End point
TSW21
Extrapolated point
at VRTT_Nom
TSW11
VSW1
VSW2
VRTT_Wr
tADC
TSW22
VRTT_Nom
TSW12
End point Extrapolated point at VRTT_Wr
VSSQ
Figure 18. Definition of tADC
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