L6713ATR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
L6713ATR
STMicroelectronics
'L6713ATR' PDF : 64 Pages View PDF
Electrical characteristics
Table 5. Electrical characteristics (continued)
Symbol
Parameter
Test condition
Reference and DAC
kVID
Output voltage accuracy
VBOOT
IVID
Boot voltage
VID pull-up current
VID pull-down current
VIDIL
VIDIH
VID thresholds
VID_SEL
VID_SEL threshold
(Intel mode)
VID_SEL pull-up current
Intel mode
VID = 1.000 V to VID = 1.600 V
FB = VOUT; FBG = GNDOUT
AMD mode
VID = 1.000 V to VID = 1.550 V
FB = VOUT; FBG = GNDOUT
Intel mode
Intel mode; VIDx to SGND
AMD mode; VIDx to 5.4 V
Intel mode; Input low
AMD mode; Input low
Intel mode; Input high
AMD mode; Input high
Input low
Input high
VIDSEL to SGND
Error amplifier
A0
EA DC gain
SR
EA slew rate
COMP = 10 pF to SGND
Differential current sensing and offset
ICSx+
I--I--N-----F----O------x----–-----I-A-----V----G---
IAVG
VOCTH
KIOCSET
kIDROOP
IOFFSET
Bias current
Current sense mismatch
Over current threshold
OCSET current accuracy
Droop current deviation from
nominal value
Offset current
Inductor sense
Rg = 1 kΩ; IINFOx = 25 μA
VOCSET (OCP)
Rg = 1 kΩ
2-PHASE, IOCSET = 60 μA;
3-PHASE, IOCSET = 90 μA;
Rg = 1kΩ
2-PHASE, IDROOP = 0 to 40 μA;
3-PHASE, IDROOP = 0 to 60 μA;
VSEN = 0.500 V to 1.600 V
Gate driver
tRISE_UGATEx HS rise time
IUGATEx
RUGATEx
HS source current
HS sink resistance
BOOTx - PHASEx = 10 V;
CUGATEx to PHASEx = 3.3 nF
BOOTx - PHASEx = 10 V
BOOTx - PHASEx = 12 V
L6713A
Min. Typ. Max. Unit
-0.5
-
0.5 %
-0.6
-
0.6 %
1.081
V
25
μA
12.5
μA
0.3
V
0.8
0.8
V
1.35
0.3
V
0.8
12.5
μA
80
dB
20
V/μs
0
μA
-3
-
3
%
1.215 1.240 1.265 V
-5
-
5
%
-1
-
1
μA
90 100 110 μA
15 30 ns
2
A
1.5
2
2.5
Ω
14/64
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