LH28F016LLT-15 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

MFG CO.

LH28F016LLT-15

16M (1M × 16, 2M × 8) Flash Memory

Sharp Electronics 

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16M (1M × 16, 2M × 8) Flash Memory

LH28F016LL

WRITE VALID

WRITE

ADDRESS AND DATA AUTOMATED

DATA-WRITE (DATA-WRITE) OR DATA-WRITE

DEEP

OR ERASE

ERASE CONFIRM OR ERASE

POWER-DOWN SETUP COMMAND COMMAND

DELAY

ADDRESSES (A) VIH

(NOTE 1)

VIL

AIN

tAVAV

tAVWH

tWHAX

WRITE READ

EXTENDED

REGISTER

COMMAND

ADDRESSES (A) VIH

(NOTE 2)

VIL

tAVAV

AIN

tAVWH tWHAX

(NOTE 3)

READ

EXTENDED

STATUS

REGISTER DATA

A = RA

READ

COMPATIBLE

STATUS

REGISTER DATA

A = RA

CEX (E) VIH

(NOTE 4) VIL

OE (G) VIH

VIL

WE (W) VIH

VIL

tWHEH

tELWL

tWHWL

tWLWH

tWHDX

tWHGL

tWHQV 1, 2

tGHWL

DATA (D/Q) VIH

VIL

HIGH-Z

tPHWL

tDVWH

DIN

DIN

tWHRL

DIN

DOUT

DIN

RY/BY (R) VOH

VOL

tRHPL

RP (P)

VIH

VIL

tVPWH

(NOTE 5)

tQVVL

VPP

(V)

VPPH

VPPL

NOTES:

1. This address string depicts Data-Write/Erase cycles with corresponding verification via ESRD.

2. This address string depicts Data-Write/Erase cycles with corresponding verification via CSRD.

3. This cycle is invalid when using CSRD for verification during Data-Write/Erase operations.

4. CEX is defined as the latter of CE0 or CE1 going LOW or the first of CE0 or CE1 going HIGH.

5. RP low transition is only to show tRHPL; not valid for above Read and Write cycles.

Figure 12. AC Waveforms for Command Write Operations

28F016LLT-12

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