LH28F016LLT-15 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F016LLT-15' PDF : 29 Pages View PDF
LH28F016LL
16M (1M × 16, 2M × 8) Flash Memory
AC Characteristics for Page Buffer Write Operations1
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
tAVAV
tELWL
tAVWL
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHGL
Write Cycle Time
CE » Setup to WE Going Low
Address Setup to WE Going Low
Data Setup to WE Going High
WE Pulse Width
Data Hold from WE High
Address Hold from WE High
CE » Hold from WE High
WE Pulse Width High
Read Recovery before Write
Write Recovery before Read
TYP.
MIN.
120
10
0
75
75
10
10
10
45
0
95
MAX.
NOTES:
CE » is defined as the latter of CE »0 or CE »1 going Low or the first of CE »0 or CE »1 going High.
1. These are WE » controlled write timings, equivalent CE » controlled write timings apply.
2. Sampled, but not 100% tested.
3. Address must be valid during the entire WE » Low pulse.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE
3
2
2
2
26
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