LH28F016LLT-15 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

MFG CO.

LH28F016LLT-15

16M (1M × 16, 2M × 8) Flash Memory

Sharp Electronics 

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16M (1M × 16, 2M × 8) Flash Memory

LH28F016LL

DEEP

POWER-DOWN

ADDRESSES (A) VIH

(NOTE 1)

VIL

WRITE VALID

WRITE

ADDRESS AND DATA AUTOMATED

DATA-WRITE (DATA-WRITE) OR DATA-WRITE

OR ERASE

ERASE CONFIRM OR ERASE

SETUP COMMAND COMMAND

DELAY

AIN

tAVAV

tAVEH tEHAX

WRITE READ

EXTENDED

REGISTER

COMMAND

ADDRESSES (A) VIH

(NOTE 2)

VIL

tAVAV

AIN

tAVEH tEHAX

(NOTE 3)

READ

EXTENDED

STATUS

REGISTER DATA

A = RA

READ

COMPATIBLE

STATUS

REGISTER DATA

WE (W) VIH

VIL

OE (G) VIH

VIL

tEHWH

tWLEL

tEHEL

tEHGL

tEHQV 1, 2

tGHEL

CEX (E) VIH

(NOTE 4) VIL

tELEH

tEHDX

DATA (D/Q) VIH

VIL

HIGH-Z

tPHEL

tDVEH

DIN

DIN

tEHRL

RY/BY (R) VOH

VOL

DIN

DOUT

DIN

tRHPL

RP (P) VIH

VIL

tVPEH

(NOTE 5)

tQVVL

VPP

(V)

VPPH

VPPL

NOTES:

1. This address string depicts Data-Write/Erase cycles with corresponding verification via ESRD.

2. This address string depicts Data-Write/Erase cycles with corresponding verification via CSRD.

3. This cycle is invalid when using CSRD for verification during Data-Write/Erase operations.

4. CEX is defined as the latter of CE0 or CE1 going LOW or the first of CE0 or CE1 going HIGH.

5. RP low transition is only to show tRHPL; not valid for above Read and Write cycles.

Figure 13. AC Waveforms for Command Write Operations

28F016LLT-13

25

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